Product Datasheet Search Results:
- BAS32LT/R
- Nxp Semiconductors / Philips Semiconductors
- High-speed switching diode - C<sub>d</sub> max.: 2 pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5000@VR=75V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 75 V
Product Details Search Results:
Semiconductors.philips.com/BAS32LT/R
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"2","I(O) Max.(A) Output Current":"200m","@t(w) (s) (Test Condition)":"1u","@I(R) (A) (Test Condition)":"10m","V(FM) Max.(V) Forward Voltage":".75","@Temp. (°C) (Test Condition)":"150","@V(R) (V)(Test Condition)":"75","V(RRM)(V) Rep.Pk.Rev. Voltage":"75","t(rr) Max.(s) Rev.Rec. Time":"4.0n","Package":"SOD-80","I(RM) Max.(A) Pk. Rev. Current":"100u","@I(F) (A) (Test Condition)":"10m","Military":"N","Semiconductor Material":"Silicon","I(RM) Max.(A) Reverse Current":"5.0u...
1117 Bytes - 09:27:17, 17 November 2024
Documentation and Support
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FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
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DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |