Product Datasheet Search Results:
3 Pages, 121 KB, Original- BAS21ARFG
- Taiwan Semiconductor Co., Ltd.
- 0.2 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Product Details Search Results:
Taiwansemi.com/BAS21ARFG
{"Status":"ACTIVE","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"GREEN, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"250 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2250 W","Average Forward Current-Max":"0.2000 A","Number of Elements":"2","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"COMMON ANODE, 2 E...
1317 Bytes - 00:32:05, 23 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
