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ASB8001.pdf2 Pages, 356 KB, Original

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Advancedsemiconductor.com/ASB8001
{"Status":"ACTIVE","Diode Forward Resistance-Max":"3 ohm","Package Body Material":"UNSPECIFIED","Frequency Band":"KU BAND","Terminal Form":"FLAT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"100 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2500 W","Application":"ATTENUATOR; LIMITER; SWITCHING","Number of Elements":"1","Terminal Position":"DUAL","Diode Type":"PIN DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Technology":"POSITIVE-INTRINSIC-NEGATIVE","Number ...
1279 Bytes - 15:33:40, 17 November 2024

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