Product Datasheet Search Results:
4 Pages, 248 KB, Original- APTGF20X60E2
- Advanced Power Technologies
- APTGF20X60E2
4 Pages, 246 KB, Original- APTGF20X60E2
- Microsemi Corp.
- 32 A, 600 V, N-CHANNEL IGBT
4 Pages, 246 KB, Original- APTGF20X60E2G
- Microsemi Corp.
- 32 A, 600 V, N-CHANNEL IGBT
Product Details Search Results:
Microsemi.com/APTGF20X60E2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-17","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"146 ns","Collector-emitter Voltage-Max":"600 V","Transistor Application":"MOTOR CONTROL","Turn-on Time-Nom (ton)":"71 ns","Collector Current-Max (IC)":"32 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type"...
1360 Bytes - 16:53:52, 22 November 2024
Microsemi.com/APTGF20X60E2G
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"146 ns","Collector Current-Max (IC)":"32 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"71 ns","EU RoHS Compliant":"Yes","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","...
1419 Bytes - 16:53:52, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| CNE60E2200TZ.pdf | 0.15 | 1 | Request | |
| PVH074R01AA60E2520090010_01AE010A.pdf | 2.40 | 1 | Request | |
| DF_532F60E2.pdf | 0.25 | 1 | Request | |
| GSM60E24-P1J.pdf | 0.36 | 1 | Request | |
| SGA60E24-P1J.pdf | 0.38 | 1 | Request | |
| 1990060E2.pdf | 0.04 | 1 | Request |
