Product Datasheet Search Results:
4 Pages, 42 KB, Original- APT8030LVR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 170 KB, Scan- APT8030LVR
- Microsemi Corp.
- 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
4 Pages, 42 KB, Original- APT8030LVRG
- Microsemi
- MOSFET N-CH 800V 27A TO-264 - APT8030LVRG
Product Details Search Results:
Microsemi.com/APT8030LVR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1494 Bytes - 02:41:05, 06 October 2024
Microsemi.com/APT8030LVRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHA...
1553 Bytes - 02:41:05, 06 October 2024
