Product Datasheet Search Results:
- AP4521GEH
- Advanced Power Electronics Corp. Usa
- 11.7 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
Product Details Search Results:
A-power.com.tw/AP4521GEH
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11.7 A","Configuration":"COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Transisto...
1539 Bytes - 15:31:28, 25 November 2024
Documentation and Support
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AP45401.pdf | 0.02 | 1 | Request | |
3WJ9111-0AP45.pdf | 50.43 | 1 | Request | |
6FC5800-0AP45-0YB0.pdf | 3.03 | 1 | Request | |
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