Product Datasheet Search Results:
6 Pages, 105 KB, Original- AP3310GJ
- Advanced Power Electronics Corp. Usa
- 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
6 Pages, 106 KB, Original- AP3310GJ-HF
- Advanced Power Electronics Corp. Usa
- 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
Product Details Search Results:
A-power.com.tw/AP3310GJ
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"24 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"10 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"REC...
1431 Bytes - 10:45:56, 25 November 2024
A-power.com.tw/AP3310GJ-HF
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"24 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"10 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Pa...
1466 Bytes - 10:45:56, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| PAP3310-P13-BN.pdf | 6.76 | 1 | Request | |
| PAP3310-P11.pdf | 6.76 | 1 | Request | |
| PAP3310-P11T-B.pdf | 6.76 | 1 | Request | |
| PAP3310-N03-BN.pdf | 6.76 | 1 | Request | |
| 1SAP331000R0378.pdf | 0.08 | 1 | Request | |
| 1SAP331000R0278.pdf | 0.08 | 1 | Request |
