Product Datasheet Search Results:
- AP2304AGN
- Advanced Power Electronics Corp. Usa
- 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET
- AP2304AGN-HF
- Advanced Power Electronics Corp. Usa
- 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP2304AGN
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1491 Bytes - 20:34:14, 22 November 2024
A-power.com.tw/AP2304AGN-HF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1528 Bytes - 20:34:14, 22 November 2024
Documentation and Support
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