Product Datasheet Search Results:

AP18P10GS.pdf5 Pages, 134 KB, Original
AP18P10GS
Advanced Power Electronics Corp. Usa
12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB

Product Details Search Results:

A-power.com.tw/AP18P10GS
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"40 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Tr...
1509 Bytes - 11:37:14, 03 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
AP1819701.pdf0.021Request
AP1819801.pdf0.021Request
CVCS_25_PC_20_AP18.pdf1.831Request
6FC5800-0AP18-0YB0.pdf3.031Request
1SAP187000R0002.pdf0.161Request
1SAP181500R0001.pdf0.261Request
1SAP182400R0002.pdf0.131Request
1SAP181100R0001.pdf0.181Request
1SAP187200R0201.pdf0.151Request
1SAP186200R0004.pdf0.271Request
1SAP187100R0005.pdf0.341Request
1SAP187100R0003.pdf0.401Request