Product Datasheet Search Results:
11 Pages, 420 KB, Original- IRF9520NSPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 100V 6.8A 3-Pin(2+Tab) D2PAK Tube
11 Pages, 404 KB, Original- IRL520NSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK Tube
11 Pages, 411 KB, Original- 520NSPBF
- International Rectifier
- 520NSPBF
11 Pages, 411 KB, Original- IRF520NSPBF
- International Rectifier
- 9.7 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 420 KB, Original- IRF9520NSPBF
- International Rectifier
- MOSFET P-CH 100V 6.8A D2PAK - IRF9520NSPBF
11 Pages, 404 KB, Original- IRL520NSPBF
- International Rectifier
- MOSFET N-CH 100V 10A D2PAK - IRL520NSPBF
Product Details Search Results:
Infineon.com/IRF9520NSPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.8(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1512 Bytes - 01:18:35, 15 November 2024
Infineon.com/IRL520NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1505 Bytes - 01:18:35, 15 November 2024
Irf.com/520NSPBF
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"23 ns","Typical Turn-Off Delay Time":"32 ns","Description":"Value","Maximum Continuous Drain Current":"9.7 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"4.5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"200@10V mOhm","Manufacturer":"International Rectifier"}...
1269 Bytes - 01:18:35, 15 November 2024
Irf.com/IRF520NSPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"91 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-M...
1629 Bytes - 01:18:35, 15 November 2024
Irf.com/IRF9520NSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"6.8A (Tc)","Gate Charge (Qg) @ Vgs":"27nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Mosfet D2Pak Assembly Site 9/Aug/2013 D2PAK Additional Assembly Site 17/Dec/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4...
2039 Bytes - 01:18:35, 15 November 2024
Irf.com/IRL520NSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Tc)","Gate Charge (Qg) @ Vgs":"20nC @ 5V","Product Photos":"TO-263","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"180 mOhm @ 6A, 10V","Datasheets":"IRL520NSPbF...
2020 Bytes - 01:18:35, 15 November 2024
