Product Datasheet Search Results:
- 3N187
- General Electric Solid State
- Silicon dual insulated-gate field-effect transistor.
- 13N1874-104
- Ibm
- 13N1874-104
- 13N1874-104
- Ibm
- 13N1874-104
- 3N187
- General Instrument
- Short Form Data 1976
Product Details Search Results:
Ibm/13N1873
643 Bytes - 04:15:54, 26 November 2024
Ibm/13N1874
642 Bytes - 04:15:54, 26 November 2024
Ibm/13N1874-104
663 Bytes - 04:15:54, 26 November 2024
Microsemi.com/3N187
799 Bytes - 04:15:54, 26 November 2024
Rca_solid_state/HR3N187
{"@V(DS) (V) (Test Condition)":"15","Status":"Discontinued","Absolute Max. Power Diss. (W)":"330m","I(GSS) Max. (A)":"50n","g(fs) Max, (S) Trans. conduct,":"18m","@(VDS) (V) (Test Condition)":"20Ê","V(BR)DSS (V)":"20","V(BR)GSS (V)":"20Ê","g(fs) Min. (S) Trans. conduct.":"7.0m","I(D) Abs. Drain Current (A)":"50m","Package":"TO-72","C(iss) Max. (F)":"8.5p"}...
849 Bytes - 04:15:54, 26 November 2024
Documentation and Support
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