Product Datasheet Search Results:

2SK3916-01.pdf4 Pages, 212 KB, Original

Product Details Search Results:

Fujielectric.co.jp/2SK3916-01
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"211 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"17.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1515 Bytes - 09:20:26, 14 March 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
2SK3916-01.pdf0.201Request