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2SK3521-01L.pdf4 Pages, 257 KB, Original

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Fujielectric.co.jp/2SK3521-01L
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"173 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1498 Bytes - 04:30:59, 28 November 2024

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