Datasheet.Directory

{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"169 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"132 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transisto...

{"Status":"Discontinued","C(iss) Max. (F)":"125p","t(r) Max. (s) Rise time":"13n","Absolute Max. Power Diss. (W)":"10","I(GSS) Max. (A)":"1.0u","I(DSS) Min. (A)":"1.0m","@(VDS) (V) (Test Condition)":"20","V(BR)DSS (V)":"400","V(BR)GSS (V)":"20","t(f) Max. (s) Fall time.":"15n","I(D) Abs. Drain Current (A)":"1.0","Package":"TO-252var","Military":"N","r(DS)on Max. (Ohms)":"9.0"}...

{"C(iss) Max. (F)":"125p","t(r) Max. (s) Rise time":"13n","Absolute Max. Power Diss. (W)":"10","I(GSS) Max. (A)":"1.0u","I(DSS) Min. (A)":"1.0m","@(VDS) (V) (Test Condition)":"20","V(BR)DSS (V)":"400","V(BR)GSS (V)":"20","t(f) Max. (s) Fall time.":"15n","I(D) Abs. Drain Current (A)":"1.0","Package":"TO-252var","Military":"N","r(DS)on Max. (Ohms)":"9.0"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"422 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"332 A","Channel Type":"N-CHANNEL","FE...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"422 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (I...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"422 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"332 A","Channel Type":"N-CHANNEL","FET...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"422 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"332 A","Channel Type":"N-CHANNEL","FET T...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"422 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Standard Package":"2,000","Supplier Device Package":"TO-263, TO-220SMD","Datasheets":"2SK3479","Rds On (Max) @ Id, Vgs":"11 mOhm @ 42A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.5W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to Source ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Standard Package":"2,000","Supplier Device Package":"TO-263, TO-220SMD","Datasheets":"2SK3479","Rds On (Max) @ Id, Vgs":"11 mOhm @ 42A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.5W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to Source ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"422 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"332 A","Channel Type":"N-CHANNEL","...