Product Datasheet Search Results:

2SK3150(L).pdf9 Pages, 89 KB, Original
2SK3150(L)
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
2SK3150(L).pdf12 Pages, 59 KB, Original
2SK3150(L)
Renesas Electronics
20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/2SK3150(L)
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"20 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Sh...
1408 Bytes - 00:35:06, 01 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
SK32SK310.pdf0.141Request
2SK3102-01R.pdf0.281Request
2SK3132.pdf0.411Request