Product Datasheet Search Results:

2SK3070(L).pdf9 Pages, 88 KB, Original
2SK3070(L)
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
2SK3070(L).pdf12 Pages, 58 KB, Original
2SK3070(L)
Renesas Electronics
75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/2SK3070(L)
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Pulsed Drain Current-Max (IDM)":"300 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"75 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package S...
1408 Bytes - 14:34:34, 16 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
6AG3111-2SK30-0AB0-ZD30D61M10S10.pdf8.781Request
6AG3111-2SK30-0AB0-ZM10.pdf8.781Request
6AG3111-2SK30-0AB0-ZD61S10.pdf8.781Request
6AG3111-2SK30-0AB0-ZD61M10.pdf8.781Request
6AG3111-2SK30-0AB0-ZD30.pdf8.781Request
6AG3111-2SK30-0AB0-ZD30D61.pdf8.781Request
6AG3111-2SK30-0AB0-ZD40M10.pdf8.781Request
6AG3111-2SK30-0AB0-ZD30S10.pdf8.781Request
6AG3111-2SK30-0AB0-ZD40S10.pdf8.781Request
6AG3111-2SK30-0AB0-ZD40M10S10.pdf8.781Request
6AG3111-2SK30-0AB0-ZD40D61M10S10.pdf8.781Request
6AG3111-2SK30-0AB0-ZM10S10.pdf8.781Request