Datasheet.Directory

{"Absolute Max. Power Diss. (W)":"50","Package":"TO-263AB","V(BR)DSS (V)":"450","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"1.5","I(D) Abs. Drain Current (A)":"3.0","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"3.2"}...

{"Absolute Max. Power Diss. (W)":"60","Package":"CONTACT MFG.","V(BR)DSS (V)":"450","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"3.0","I(D) Abs. Drain Current (A)":"5.0","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"1.6"}...

{"Absolute Max. Power Diss. (W)":"70","Package":"CONTACT MFG.","V(BR)DSS (V)":"450","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"6.0","I(D) Abs. Drain Current (A)":"10","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"750m"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor ...

{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"15(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Power Dissipation":"75(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220FL","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"6.0p","V(GS)off Max. (V)":"1.5","I(G) Max. (A)":"90.0m","Absolute Max. Power Diss. (W)":"800m","I(DSS) Max. (A)":"20m","I(GSS) Max. (A)":"1.0n","I(DSS) Min. (A)":"2.6m","V(BR)GSS (V)":"40","Package":"CONTACT MFG.","Military":"N","g(fs) Max, (S) Trans. conduct,":"22m"}...