Product Datasheet Search Results:
1 Pages, 955 KB, Scan- 2SK1931
- Shindengen Electric Manufacturing Co., Ltd.
- 5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 94 KB, Scan- 2SK1931-4061
- Shindengen Electric Manufacturing Co., Ltd.
- 5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 94 KB, Scan- 2SK1931-4071
- Shindengen Electric Manufacturing Co., Ltd.
- 5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 72 KB, Scan- 2SK1931-4100
- Shindengen Electric Manufacturing Co., Ltd.
- 5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 94 KB, Scan- 2SK1931-4101
- Shindengen Electric Manufacturing Co., Ltd.
- 5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Shindengen.co.jp/2SK1931
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transistor App...
1496 Bytes - 05:01:43, 05 November 2024
Shindengen.co.jp/2SK1931-4061
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6500 o...
1361 Bytes - 05:01:43, 05 November 2024
Shindengen.co.jp/2SK1931-4071
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6500 o...
1363 Bytes - 05:01:43, 05 November 2024
Shindengen.co.jp/2SK1931-4100
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EPACK-3","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"20 W","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"5 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SIN...
1414 Bytes - 05:01:43, 05 November 2024
Shindengen.co.jp/2SK1931-4101
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6500 o...
1358 Bytes - 05:01:43, 05 November 2024
Documentation and Support
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| SK12SK110.pdf | 0.13 | 1 | Request | |
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| 2SK1062.pdf | 0.32 | 1 | Request | |
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| 2SK1828.pdf | 0.30 | 1 | Request |
