Product Datasheet Search Results:
6 Pages, 219 KB, Original- 2SJ668(2-7B1B)
- Toshiba America Electronic Components, Inc.
- 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET
6 Pages, 219 KB, Original- 2SJ668(2-7J1B)
- Toshiba America Electronic Components, Inc.
- 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET
6 Pages, 200 KB, Original- 2SJ668(TE16L1,NQ)
- Toshiba
- Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold T/R
Product Details Search Results:
Toshiba.co.jp/2SJ668
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"40.5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tr...
1520 Bytes - 04:15:08, 01 December 2024
Toshiba.co.jp/2SJ668(2-7B1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"20 W","Avalanche Energy Rating (Eas)":"40.5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":...
1633 Bytes - 04:15:08, 01 December 2024
Toshiba.co.jp/2SJ668(2-7J1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"20 W","Avalanche Energy Rating (Eas)":"40.5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-...
1658 Bytes - 04:15:08, 01 December 2024
Toshiba.co.jp/2SJ668(Q)
{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Power Dissipation":"20 W","Operating Temp Range":"-55C to 150C","Package Type":"New PW-Mold","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1437 Bytes - 04:15:08, 01 December 2024
Toshiba.co.jp/2SJ668(TE16L1,NQ)
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Configuration":"Single","Brand":"Toshiba","Id - Continuous Drain Current":"- 5 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"20 W","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"170 mOhms","Package / Case":"PW-MOLD-2","Vgs - Gate-Source Breakdown Voltage":"20 V","Fall Time":"14 ns...
1373 Bytes - 04:15:08, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SJ668.pdf | 0.18 | 1 | Request |
