Product Datasheet Search Results:
- 2SJ552L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel MOS FET
- 2SJ552L-E
- Renesas Electronics
- 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SJ552L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0950 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1477 Bytes - 17:33:33, 06 October 2024