Datasheet.Directory

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Mounting Style":"SMD/SMT","Vgs - Gate-Source Breakdown Voltage":"20 V","Forward Transconductance - Min":"100 mS","Brand":"Toshiba","Id - Continuous Drain Current":"- 200 mA","Vgs th - Gate-Source Threshold Voltage":"- 1.5 V","Pd - Power Dissipation":"200 mW","Packaging":"Tube","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"2.4 Ohms","Pac...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Input Capacitance (Ciss) @ Vds":"92pF @ 3V","Series":"-","Standard Package":"3,000","Supplier Device Package":"SC-59","Datasheets":"2SJ305 -","Rds On (Max) @ Id, Vgs":"4 Ohm @ 50mA, 2.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"200mW","Package / Case":"TO-236-3,...