Product Datasheet Search Results:

2SC2655-X-T9N-K.pdf4 Pages, 59 KB, Original
2SC2655-X-T9N-K
Unisonic Technologies Co., Ltd.
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

Product Details Search Results:

Toshiba.co.jp/2SC2655-O
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.9000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"70","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Termin...
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Toshiba.co.jp/2SC2655-Y
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.9000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Termi...
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Toshiba.co.jp/2SC2655-Y(F)
{"Collector Current (DC) ":"2 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"2 A","Collector-Emitter Voltage":"50 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","DC Current Gain (Min)":"120","Operating Temperature Classification":"Military","Power Dissipation":"0.9 W","Operating Temp Range":"-55C to 150C","Frequency":"100 MHz","Package Type":"LSTM","Collector-Base Voltage":"50 V","Rad Hardened":"No","DC Current Gain":"120","Pin Count":"3","Number of El...
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Toshiba.co.jp/2SC2655-Y,F(J
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Toshiba.co.jp/2SC2655-Y,F(J)
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Toshiba.co.jp/2SC2655-Y.F(J
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Toshiba.co.jp/2SC2655-Y,T6F(J
{"Rad Hardened":"No"}...
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Toshiba.co.jp/2SC2655-Y,T6F(J)
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Toshiba.co.jp/2SC2655-Y(TE6,F,M)
{"Emitter- Base Voltage VEBO":"5 V","Gain Bandwidth Product fT":"100 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Minimum Operating Temperature":"- 55 C","Factory Pack Quantity":"3000","DC Collector\/Base Gain hfe Min":"70","DC Current Gain hFE Max":"240","Collector-Emitter Saturation Voltage":"0.5 V","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Tube","Collector- Base Voltage VCBO":"50 V","Mounting Style":"Through Hole","Pd - Power Dissipation":"900 mW","Pack...
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Toshiba.co.jp/2SC2655-Y(TPE6,F)
{"Collector Current (DC) ":"2(A)","Configuration":"Single","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Collector-Emitter Voltage":"50(V)","Rad Hardened":"No","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Frequency":"100(MHz)","Package Type":"TO-92 Mod","Collector-Base Voltage":"50(V)","DC Current Gain":"120","Output Power":"Not Required(W)","Power Dissipation":"0.9(W)",...
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Toshiba.semicon-storage.com/2SC2655-Y(F,M)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"2A","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 500mA, 2V","Transistor Type":"NPN","Product Photos":"TO-92 PKG","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"500mV @ 50mA, 1A","Current - Collector Cutoff (Max)":"1\u00b5A (ICBO)","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"LSTM","Packaging":"Bulk","Datasheets":"2SC2655","Power -...
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Unisonic.com.tw/2SC2655-O-AE3-R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"SOT-23, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"2 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL",...
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