Product Datasheet Search Results:

2N7002G-AE2-R.pdf6 Pages, 286 KB, Original
2N7002G-AE2-R
Unisonic Technologies Co., Ltd.
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236

Product Details Search Results:

Unisonic.com.tw/2N7002G-AE2-R
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHI...
1515 Bytes - 19:43:52, 17 November 2024

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