Product Datasheet Search Results:
5 Pages, 167 KB, Scan- 2N6851TX
- International Rectifier
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
5 Pages, 167 KB, Scan- 2N6851TXV
- International Rectifier
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/2N6851TX
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1428 Bytes - 12:59:10, 16 November 2024
Irf.com/2N6851TXV
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1433 Bytes - 12:59:10, 16 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SPD02N60C3.pdf | 0.64 | 1 | Request | |
| SPU02N60S5.pdf | 0.70 | 1 | Request | |
| SPP02N60C3.pdf | 0.45 | 1 | Request | |
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| SPS02N60C3.pdf | 0.63 | 1 | Request | |
| SGB02N60.pdf | 0.77 | 1 | Request | |
| SGD02N60.pdf | 0.34 | 1 | Request | |
| SPD02N60S5.pdf | 0.70 | 1 | Request | |
| SPB02N60C3.pdf | 0.53 | 1 | Request | |
| SPP02N60S5.pdf | 0.46 | 1 | Request |
