Product Datasheet Search Results:

2N6800E.pdf11 Pages, 324 KB, Scan
2N6800E
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800EA.pdf11 Pages, 324 KB, Scan
2N6800EA
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800EAPBF.pdf11 Pages, 324 KB, Scan
2N6800EAPBF
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800EB.pdf11 Pages, 324 KB, Scan
2N6800EB
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800EBPBF.pdf11 Pages, 324 KB, Scan
2N6800EBPBF
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800EC.pdf11 Pages, 324 KB, Scan
2N6800EC
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800ECPBF.pdf11 Pages, 324 KB, Scan
2N6800ECPBF
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800ED.pdf11 Pages, 324 KB, Scan
2N6800ED
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800EDPBF.pdf11 Pages, 324 KB, Scan
2N6800EDPBF
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800EPBF.pdf11 Pages, 324 KB, Scan
2N6800EPBF
International Rectifier
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

Product Details Search Results:

Irf.com/2N6800E
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...
1209 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800EA
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...
1215 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800EAPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...
1279 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800EB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...
1215 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800EBPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...
1282 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800EC
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...
1213 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800ECPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...
1280 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800ED
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"400 V","Number of Ele...
1213 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800EDPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...
1279 Bytes - 16:06:27, 14 January 2025
Irf.com/2N6800EPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3",...
1274 Bytes - 16:06:27, 14 January 2025

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