Product Datasheet Search Results:
2 Pages, 20 KB, Original- 2N6784.MOD
- Semelab Plc.
- 2.25 A, 200 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2 Pages, 20 KB, Original- 2N6784.MODR1
- Semelab Plc.
- 2.25 A, 200 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Semelab.co.uk/2N6784.MOD
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.25 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"9 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Transistor Application":"SWITCHING","Case Connec...
1432 Bytes - 09:20:29, 01 November 2024
Semelab.co.uk/2N6784.MODR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.25 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"9 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","...
1490 Bytes - 09:20:29, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 7B35E022N673G1.pdf | 0.07 | 1 | Request | |
| 7B35E6472N674H2.pdf | 0.07 | 1 | Request | |
| 7B35E4822N674G1.pdf | 0.07 | 1 | Request | |
| 7B36R552N675G1.pdf | 0.08 | 1 | Request | |
| 7B35E2852N679G1.pdf | 0.04 | 1 | Request |
