Datasheet.Directory

{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"55n","r(DS)on Max. (Ohms)":"1.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4.0...

{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"55n","r(DS)on Max. (Ohms)":"1.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4.0...

{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"9.0","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"55n","r(DS)on Max. (Ohms)":"1.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4.0...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"75(W)","Continuous Drain Current":"5.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-204AE","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","Transistor A...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"40(Max) ns","Typical Turn-Off Delay Time":"80(Max) ns","Description":"Value","Maximum Continuous Drain Current":"5.5 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1220@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"35(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"40(Max) ns","Typical Turn-Off Delay Time":"80(Max) ns","Description":"Value","Maximum Continuous Drain Current":"5.5 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1220@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"35(Max) ns"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.7 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.22 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.22 Ohm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuous Drain (Id) @ 25\u...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...