Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"14 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"210@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80(Max) ns","Typical Turn-Off Delay Time":"60(Max) ns","Description":"Value","Maximum Continuous Drain Current":"14 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"210@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80 ns","Typical Turn-Off Delay Time":"60 ns","Description":"Value","Maximum Continuous Drain Current":"14 A","Package":"3TO-3","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"210@10V mOhm","Manufacturer":"Microsemi","Typical Fall Time":"45 ns"}...