Product Datasheet Search Results:

2N6660-QR.pdf3 Pages, 77 KB, Original
2N6660-QR
Semelab Plc.
1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
2N6660-QR-B.pdf3 Pages, 77 KB, Original
2N6660-QR-B
Semelab Plc.
1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD

Product Details Search Results:

Semelab.co.uk/2N6660-QR
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...
1436 Bytes - 00:56:06, 13 November 2024
Semelab.co.uk/2N6660-QR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...
1451 Bytes - 00:56:06, 13 November 2024

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