Product Datasheet Search Results:
5 Pages, 396 KB, Original- 2N6341
- Advanced Semiconductor, Inc.
- Silicon Transistor Selection Guide
1 Pages, 54 KB, Scan- 2N6341
- Api Electronics Group
- 25 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3
1 Pages, 113 KB, Original- 2N6341
- Api Electronics, Inc.
- 25 Amp Transistors
3 Pages, 134 KB, Original- 2N6341
- Boca Semiconductor
- HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200
1 Pages, 74 KB, Original- 2N6341
- Diode Transistor Co., Inc.
- Transistor Short Form Data
1 Pages, 69 KB, Scan- 2N6341
- Silicon Transistor Corp.
- Low Frequency Silicon Power Transistor
Product Details Search Results:
Apitech.com/2N6341
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"25 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","N...
1233 Bytes - 10:15:54, 24 November 2024
Dla.mil/2N6341+JAN
{"t(s) Max. (s) Storage time.":"1.0u","V(CE)sat Max.(V)":"1.8","Absolute Max. Power Diss. (W)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"180","I(C) Abs.(A) Collector Current":"25","h(FE) Max. Current gain.":"120","@V(CBO) (V) (Test Condition)":"150","I(CBO) Max. (A)":"10u","@Freq. (Hz) (Test Condition)":"100k","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"40M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"2.5","V(BR)CEO (V)":"150",...
1189 Bytes - 10:15:54, 24 November 2024
Dla.mil/2N6341+JANTX
{"t(s) Max. (s) Storage time.":"1.0u","V(CE)sat Max.(V)":"1.8","Absolute Max. Power Diss. (W)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"180","I(C) Abs.(A) Collector Current":"25","h(FE) Max. Current gain.":"120","@V(CBO) (V) (Test Condition)":"150","I(CBO) Max. (A)":"10u","@Freq. (Hz) (Test Condition)":"100k","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"40M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"2.5","V(BR)CEO (V)":"150",...
1201 Bytes - 10:15:54, 24 November 2024
Dla.mil/2N6341+JANTXV
{"t(s) Max. (s) Storage time.":"1.0u","V(CE)sat Max.(V)":"1.8","Absolute Max. Power Diss. (W)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"180","I(C) Abs.(A) Collector Current":"25","h(FE) Max. Current gain.":"120","@V(CBO) (V) (Test Condition)":"150","I(CBO) Max. (A)":"10u","@Freq. (Hz) (Test Condition)":"100k","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"40M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"2.5","V(BR)CEO (V)":"150",...
1206 Bytes - 10:15:54, 24 November 2024
Microsemi.com/2N6341
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-3, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"200 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"12","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"25 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER...
1232 Bytes - 10:15:54, 24 November 2024
Microsemi.com/JAN2N6341
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"...
1198 Bytes - 10:15:54, 24 November 2024
Microsemi.com/JANTX2N6341
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"25A","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.8V @ 2.5A, 25A","Series":"Military, MIL-PRF-19500/509","Package / Case":"TO-204AA, TO-3","Voltage - Collector Emitter Breakdown (Max)":"150V","Power - Max":"200W","Packaging":"Bulk","Datasheets":"2N6338, 2N6341","Current - Collector Cutoff (Max)":"10\u00b5A","Supplier Device Package":"TO-3 (TO-204AA)...
1496 Bytes - 10:15:54, 24 November 2024
Microsemi.com/JANTXV2N6341
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"...
1215 Bytes - 10:15:54, 24 November 2024
Multicomp.com.au/2N6341
{"Collector Emitter Voltage V(br)ceo:":"150 V","Transistor Polarity:":"NPN","MSL:":"-","No. of Pins:":"2","DC Collector Current:":"25 A","Power Dissipation Pd:":"200 W","Transistor Case Style:":"TO-3","Operating Temperature Max:":"200 \u00b0C","DC Current Gain hFE:":"120","Operating Temperature Min:":"-65 \u00b0C","SVHC:":"To Be Advised","Transition Frequency Typ ft:":"40 MHz"}...
1393 Bytes - 10:15:54, 24 November 2024
N_a/2N6341
{"Category":"NPN Transistor, Transistor","Amps":"25A","MHz":">40 MHz","Volts":"180V"}...
517 Bytes - 10:15:54, 24 November 2024
Onsemi.com/2N6341
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"25A","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 10A, 2V","Transistor Type":"NPN","Product Photos":"TO-3 Pkg","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.8V @ 2.5A, 25A","Current - Collector Cutoff (Max)":"50\u00b5A","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"150V","Supplier Device Package":"TO-3","Packaging":"Tray","Datasheets":"2N6338,41","Power - Max":"2...
1525 Bytes - 10:15:54, 24 November 2024
Onsemi.com/2N6341G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"25A","Frequency - Transition":"40MHz","Transistor Type":"NPN","Product Photos":"TO-3 Pkg","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.8V @ 2.5A, 25A","Series":"-","Package / Case":"TO-204AA, TO-3","Voltage - Collector Emitter Breakdown (Max)":"150V","Power - Max":"200W","Packaging":"Tray","Datasheets":"2N6338,41","Current - Collector Cutoff (Max)":"50\u00b5A","Supplier Device Package":"TO-3","Standar...
1644 Bytes - 10:15:54, 24 November 2024
Documentation and Support
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