Product Datasheet Search Results:
- 2N6308JAN
- New England Semiconductor
- NPN POWER SILICON TRANSISTOR
- 2N6308JANTX
- Microsemi
- Trans GP BJT NPN 350V 8A 3-Pin(2+Tab) TO-3
- 2N6308JANTXV
- New England Semiconductor
- NPN POWER SILICON TRANSISTOR
Product Details Search Results:
Microsemi.com/2N6308JANTX
{"Collector Current (DC) ":"8 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"8 A","Collector-Emitter Voltage":"350 V","Mounting":"Through Hole","Emitter-Base Voltage":"8 V","Category ":"Bipolar Power","DC Current Gain (Min)":"12","Operating Temperature Classification":"Military","Power Dissipation":"125 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-3","Collector-Base Voltage":"700 V","Rad Hardened":"No","DC Current Gain":"12","Pin Count":"2 +Tab","Number of Elements":"1"}...
1515 Bytes - 15:43:12, 06 October 2024