Product Datasheet Search Results:
1 Pages, 6 KB, Original- 2N6212
- American Microsemiconductor, Inc.
- 2 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-66
1 Pages, 57 KB, Scan- 2N6212
- Api Electronics Group
- 2 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-66
2 Pages, 224 KB, Original- 2N6212
- Api Electronics, Inc.
- Short form transistor data
3 Pages, 146 KB, Original- 2N6212
- Boca Semiconductor
- MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS - Pol=PNP / Pkg=TO66 / Vceo=350 / Ic=2 / Hfe=10-100 / fT(Hz)=20M / Pwr(W)=35
2 Pages, 489 KB, Original- 2N6212
- Central Semiconductor Corp.
- 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-66
2 Pages, 489 KB, Original- 2N6212LEADFREE
- Central Semiconductor Corp.
- 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-66
1 Pages, 85 KB, Original- 2N6212
- Diode Transistor Co., Inc.
- Transistor Short Form Data - TO-3
Product Details Search Results:
Americanmicrosemi.com/2N6212
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"2 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Number of Terminals":"2",...
1244 Bytes - 14:34:13, 13 November 2024
Apitech.com/2N6212
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Nu...
1233 Bytes - 14:34:13, 13 November 2024
Centralsemi.com/2N6212
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"35 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transisto...
1360 Bytes - 14:34:13, 13 November 2024
Centralsemi.com/2N6212LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"35 W","Collector Current-Max (IC)":"1 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"300 V","Transition Frequency-Nom (fT)":"20 MHz","Transistor Application":"SWITCHING","Cas...
1456 Bytes - 14:34:13, 13 November 2024
Dla.mil/2N6212+JAN
{"t(s) Max. (s) Storage time.":"2.5u","V(CE)sat Max.(V)":"1.6","Absolute Max. Power Diss. (W)":"20","V(BR)CBO (V)":"350","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"2.0","h(FE) Max. Current gain.":"100","@V(CBO) (V) (Test Condition)":"315","I(CBO) Max. (A)":"500u","Package":"TO-66","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"125m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JAN2N6212","@I(C) (A) (Test Condition)":"...
1094 Bytes - 14:34:13, 13 November 2024
Dla.mil/2N6212+JANS
{"t(s) Max. (s) Storage time.":"2.5u","V(CE)sat Max.(V)":"1.6","Absolute Max. Power Diss. (W)":"20","V(BR)CBO (V)":"350","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"2.0","h(FE) Max. Current gain.":"100","@V(CBO) (V) (Test Condition)":"315","I(CBO) Max. (A)":"500u","Package":"TO-66","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"125m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JANS2N6212","@I(C) (A) (Test Condition)":...
1100 Bytes - 14:34:13, 13 November 2024
Dla.mil/2N6212+JANTX
{"t(s) Max. (s) Storage time.":"2.5u","V(CE)sat Max.(V)":"1.6","Absolute Max. Power Diss. (W)":"20","V(BR)CBO (V)":"350","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"2.0","h(FE) Max. Current gain.":"100","@V(CBO) (V) (Test Condition)":"315","I(CBO) Max. (A)":"500u","Package":"TO-66","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"125m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JANTX2N6212","@I(C) (A) (Test Condition)"...
1106 Bytes - 14:34:13, 13 November 2024
Dla.mil/2N6212+JANTXV
{"t(s) Max. (s) Storage time.":"2.5u","V(CE)sat Max.(V)":"1.6","Absolute Max. Power Diss. (W)":"20","V(BR)CBO (V)":"350","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"2.0","h(FE) Max. Current gain.":"100","@V(CBO) (V) (Test Condition)":"315","I(CBO) Max. (A)":"500u","Package":"TO-66","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"125m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JANTXV2N6212","@I(C) (A) (Test Condition)...
1110 Bytes - 14:34:13, 13 November 2024
Microsemi.com/2N6212
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"3 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"2 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER",...
1231 Bytes - 14:34:13, 13 November 2024
Microsemi.com/JAN2N6212
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"3 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND",...
1311 Bytes - 14:34:13, 13 November 2024
Microsemi.com/JANTX2N6212
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"2A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 125mA, 1A","Series":"Military, MIL-PRF-19500/461","Package / Case":"*","Voltage - Collector Emitter Breakdown (Max)":"300V","Supplier Device Package":"*","Packaging":"*","Power - Max":"3W","Current - Collector Cutoff (Max)":"5mA","Standard Package":"1","Mounting Type":"*","DC Current Gain (hFE) (...
1327 Bytes - 14:34:13, 13 November 2024
Microsemi.com/JANTXV2N6212
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"3 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND",...
1329 Bytes - 14:34:13, 13 November 2024
