Datasheet.Directory

{"P(D) Max.(W) Power Dissipation":"600m","V(BR)CBO (V)":"75","h(FE) Min. Static Current Gain":"100","Type (NPN/PNP)":"NPN","I(C) Abs.(A) Collector Current":"600m","h(FE) Max. Current gain.":"300","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10n","Number of Devices":"2","Package":"SMT","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"20","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JANTX2N5796U","@I(C) (A) (Test Condition)":"50m","Semiconduc...

{"P(D) Max.(W) Power Dissipation":"600m","V(BR)CBO (V)":"75","h(FE) Min. Static Current Gain":"100","Type (NPN/PNP)":"NPN","I(C) Abs.(A) Collector Current":"600m","h(FE) Max. Current gain.":"300","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10n","Number of Devices":"2","Package":"SMT","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"20","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JANTXV2N5796U","@I(C) (A) (Test Condition)":"50m","Semicondu...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CHIP CARRIER","Turn-on Time-Max (ton)":"50 ns","Turn-off Time-Max (toff)":"140 ns","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Terminal Position":"DUAL","Transis...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Turn-off Time-Max (toff)":"140 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"50 ns","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Transistor Element Material":"SILICON","Terminal Position":"DUAL"...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"2 PNP (Dual)","Product Photos":"JANTX2N5796U","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA (ICBO)","Series":"Military, MIL-PRF-19500/496","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"6-SMD","Packaging":"...

{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Collector Current-Max (IC)":"0.6000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Turn-off Time-Max (toff)":"140 ns","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"50 ns","Collector-emitter Voltage-Max":"60 V","Transistor Application...

{"Emitter- Base Voltage VEBO":"5 V","Collector-Emitter Saturation Voltage":"0.4 V, 1.6 V","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","DC Collector/Base Gain hfe Min":"75","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"60 V","Packaging":"Waffle","Collector- Base Voltage VCBO":"60 V","Minimum Operating Temperature":"- 65 C","Pd - Power Dissipation":"0.6 W","Configuration":"Dual","Maximum Operating Temperature":"+ 200 C","Brand":"Optek / TT Electronics","RoHS"...

{"Category":"Bipolar Power","Dimensions":"6.35 x 4.45 x 2.03 mm","Maximum Collector Emitter Saturation Voltage":"1.6 V","Transistor Material":"Si","Width":"4.45 mm","Package Type":"Ceramic","Number of Elements per Chip":"2","Configuration":"Dual","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"60 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2.6 V","Maximum Emitter Base Voltage":"5 V","Length":"6.35 ...

{"Category":"Bipolar Power","Dimensions":"6.35 x 4.45 x 2.03 mm","Maximum Collector Emitter Saturation Voltage":"1.6 V","Transistor Material":"Si","Width":"4.45 mm","Package Type":"Ceramic","Number of Elements per Chip":"2","Configuration":"Dual","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"60 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2.6 V","Maximum Emitter Base Voltage":"5 V","Length":"6.35 ...

{"Category":"Bipolar Power","Dimensions":"6.35 x 4.45 x 2.03 mm","Maximum Collector Emitter Saturation Voltage":"1.6 V","Transistor Material":"Si","Width":"4.45 mm","Package Type":"Ceramic","Number of Elements per Chip":"2","Configuration":"Dual","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"60 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2.6 V","Maximum Emitter Base Voltage":"5 V","Length":"6.35 ...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Transistor Type":"2 PNP (Dual)","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"1.6V @ 50mA, 500mA","Series":"-","Package / Case":"6-CLCC","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"600mW","Packaging":"Bulk","Datasheets":"2N5796U","Current - Collector Cutoff (Max)":"-","Supplier Device Package":"6-CLCC","Standard Package":"1","Mounting Type":"Sur...