Product Datasheet Search Results:
1 Pages, 43 KB, Scan- JAN2N5416S
- Defense Logistics Agency
- 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
1 Pages, 43 KB, Scan- JANTX2N5416S
- Defense Logistics Agency
- 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
1 Pages, 43 KB, Scan- JANTXV2N5416S
- Defense Logistics Agency
- 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-39
6 Pages, 318 KB, Original- 2N5416S
- Motorola / Freescale Semiconductor
- Power Transistor Selection Guide
2 Pages, 49 KB, Original- JANTX2N5416S
- Microchip Technology
- Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag
2 Pages, 49 KB, Original- JANTXV2N5416S
- Microchip Technology
- Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag
3 Pages, 177 KB, Original- 2N5416S
- Microsemi Corp.
- 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2 Pages, 49 KB, Original- 2N5416SJAN
- Microsemi Corporation
- PNP LOW POWER SILICON TRANSISTOR
Product Details Search Results:
Aeroflex.com/JAN2N5416S
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"10000 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-5, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7500 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"1000 ns","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTO...
1403 Bytes - 15:28:29, 31 October 2024
Aeroflex.com/JANTX2N5416S
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"10000 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-5, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7500 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"1000 ns","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTO...
1418 Bytes - 15:28:29, 31 October 2024
Aeroflex.com/JANTXV2N5416S
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Element...
1239 Bytes - 15:28:29, 31 October 2024
Dla.mil/2N5416S+JAN
{"V(CE)sat Max.(V)":"2.0","Absolute Max. Power Diss. (W)":"10","t(on) Max. (s) Turn-On Time":"1.0u","V(BR)CBO (V)":"350","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"10u","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-39","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JAN2N5416S","@I(C) (A) (Test Co...
1067 Bytes - 15:28:29, 31 October 2024
Dla.mil/2N5416S+JANTX
{"V(CE)sat Max.(V)":"2.0","Absolute Max. Power Diss. (W)":"10","t(on) Max. (s) Turn-On Time":"1.0u","V(BR)CBO (V)":"350","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"10u","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-39","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JANTX2N5416S","@I(C) (A) (Test ...
1079 Bytes - 15:28:29, 31 October 2024
Dla.mil/2N5416S+JANTXV
{"V(CE)sat Max.(V)":"2.0","Absolute Max. Power Diss. (W)":"10","t(on) Max. (s) Turn-On Time":"1.0u","V(BR)CBO (V)":"350","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"10u","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-39","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JANTXV2N5416S","@I(C) (A) (Test...
1085 Bytes - 15:28:29, 31 October 2024
Microchip.com/JANTX2N5416S
1023 Bytes - 15:28:29, 31 October 2024
Microchip.com/JANTXV2N5416S
1034 Bytes - 15:28:29, 31 October 2024
Microsemi.com/2N5416S
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7500 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"1000 ns","Turn-off Time-Max (toff)":"10000 ns","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GE...
1318 Bytes - 15:28:29, 31 October 2024
Microsemi.com/2N5416SJANTX
{"Collector Current (DC) ":"1 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"1 A","Collector-Emitter Voltage":"300 V","Mounting":"Through Hole","Emitter-Base Voltage":"6 V","Category ":"Bipolar Power","DC Current Gain (Min)":"30","Operating Temperature Classification":"Military","Power Dissipation":"0.75 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"350 V","Rad Hardened":"No","DC Current Gain":"30","Pin Count":"3","Number of Elements":"1"}...
1486 Bytes - 15:28:29, 31 October 2024
Microsemi.com/2N5416SJANTXV
{"Collector Current (DC) ":"1 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"300 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"6 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.75 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"350 V","DC Current Gain":"30","Pin Count":"3","Number of Elements":"1"}...
1424 Bytes - 15:28:29, 31 October 2024
Microsemi.com/JAN2N5416S
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7500 W","Collector Current-Max (IC)":"1 A","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Turn-off Time-Max (toff)":"10000 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"1000 ns","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Case Connectio...
1417 Bytes - 15:28:29, 31 October 2024
Documentation and Support
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| N0416SC040.pdf | 0.13 | 1 | Request | |
| N0416SG020.pdf | 0.06 | 1 | Request |
