Datasheet.Directory

{"@I(C) (A) (Test Condition)":"150m","Semiconductor Material":"Silicon","Number of Devices":"2","Package":"TO-226(6)","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"300m","V(BR)CEO (V)":"40","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTX2N4854U"}...

{"@I(C) (A) (Test Condition)":"150m","Semiconductor Material":"Silicon","Number of Devices":"2","Package":"TO-226(6)","f(T) Min. (Hz) Transition Freq":"200M","I(C) Abs.(A) Collector Current":"600m","P(D) Max.(W) Power Dissipation":"300m","V(BR)CEO (V)":"40","h(FE) Min. Static Current Gain":"100","Military":"Y","Mil Number":"JANTXV2N4854U"}...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"35","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FLATPAK-6","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"FLATPACK","Turn-on Time-Max (ton)":"45 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Number of Elements":"2","Terminal Position":"DUAL","Transistor Polarity...

{"Collector Current (DC) ":"0.6 A","Transistor Polarity":"NPN/PNP","Collector-Emitter Voltage":"40 V","Rad Hardened":"No","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.6 W","Operating Temp Range":"-65C to 200C","Package Type":"U","Collector-Base Voltage":"60 V","DC Current Gain":"50","Pin Count":"6","Number of Elements":"2"}...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"45 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Number of Elements":"2","Terminal Position":"DUAL",...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Transistor Type":"NPN, PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"400mV @ 15mA, 150mA","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Series":"Military, MIL-PRF-19500/421","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"6-SMD","Packaging":"Bulk","Power - Max":"600mW","Package / Case":"6-SMD, No Lead...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"50","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"45 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Number of Elements":"2","Terminal Position":"DUAL",...

{"Emitter- Base Voltage VEBO":"5 V","Collector-Emitter Saturation Voltage":"0.4 V","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN, PNP","DC Collector/Base Gain hfe Min":"100","DC Current Gain hFE Max":"300","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"40 V","Packaging":"Waffle","Collector- Base Voltage VCBO":"60 V","Minimum Operating Temperature":"- 65 C","Pd - Power Dissipation":"2 W","Configuration":"Dual","Maximum Operating Temperature":"+ 200 C","Brand":"O...

{"Category":"Bipolar Power","Dimensions":"6.35 x 4.45 x 2.03 mm","Maximum Collector Emitter Saturation Voltage":"0.4 V","Transistor Material":"Si","Width":"4.45 mm","Package Type":"C 6","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN, PNP","Maximum Collector Base Voltage":"60 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"Minimum of 0.8 V","Maximum Emitter Base Voltage":"5...

{"Polarity":"NPN","Power Dissipation":"600\n \n mW","Voltage, Collector to Emitter":"40\n \n V","Current, Collector":"600\n \n mA","Voltage, Breakdown, Collector to Emitter":"40\n \n V"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Transistor Type":"NPN, PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"400mV @ 15mA, 150mA","Supplier Device Package":"6-CLCC","Series":"-","Package / Case":"6-CLCC","PCN Design/Specification":"Transistor Die Change 20/Jun/2014","Voltage - Collector Emitter Breakdown (Max)":"40V","Packaging":"Bulk","Datasheets":"2N4854U","Current - Collector Cutoff (Max)":"-","Powe...