Product Datasheet Search Results:
- 2N4356
- Advanced Semiconductor, Inc.
- 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-105
- 2N4356
- Continental Device India Limited
- Epoxy Package TO-105 PNP Transistors
- 2N4356
- Central Semiconductor Corp.
- 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-105
- 2N4356
- Fairchild Semiconductor
- Full Line Condensed Catalogue 1977
- 2N4356
- Micro Electronics
- Semiconductor Devices
- 2N4356
- National Semiconductor
- Pro-Electron Transistor Datasheets
- 2N4356
- Vishay Presicion Group
- 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-222AB
Product Details Search Results:
Advancedsemiconductor.com/2N4356
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-105, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"25","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.5000 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"3","Number of Elements":"...
1221 Bytes - 22:46:00, 16 November 2024
Centralsemi.com/2N4356
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Transistor Polarity":"PNP","Turn-on Time-Max (ton)":"100 ns","Power Dissipation Ambient-Max":"0.3500 W","Turn-off Time-Max (toff)":"400 ns","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"1 A","Transition Frequency-Nom (fT)":"100 MHz","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Configuration":"SINGLE","Transistor Application":"SWITCHING","DC Current Gain-Min (hFE)":"30...
1213 Bytes - 22:46:00, 16 November 2024
Various/2N4356
AMH, 2N4356, Silicon, PNP, 350mW, 80V, 80V, 5V, 600mA, 125°C, 100MHz, 30, 30MIN, MCE, TO106-1...
528 Bytes - 22:46:00, 16 November 2024
Vishay.com/2N4356
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-222AB, 4 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"25","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.5000 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Number of Elements":"1","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Term...
1208 Bytes - 22:46:00, 16 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
FP32N43_11_0F.pdf | 0.11 | 1 | Request | |
FP32N43_11_0F_DWG.pdf | 0.34 | 1 | Request | |
1TGE206512N4316.pdf | 0.07 | 1 | Request | |
1TGE206532N4316.pdf | 0.07 | 1 | Request | |
1TGE107022N4316.pdf | 0.07 | 1 | Request | |
1TGE106512N4316.pdf | 0.07 | 1 | Request | |
1TGE107012N4316.pdf | 0.07 | 1 | Request | |
1TGE106532N4316.pdf | 0.07 | 1 | Request | |
1TGE107522N4316.pdf | 0.07 | 1 | Request | |
1TGE206012N4316.pdf | 0.07 | 1 | Request | |
1TGE107532N4316.pdf | 0.07 | 1 | Request | |
1TGE106032N4316.pdf | 0.07 | 1 | Request |