Product Datasheet Search Results:

2N3866.pdf3 Pages, 286 KB, Scan
2N3866
Advani-oerlikon Ltd.
Television / Video Devices
2N3866.pdf5 Pages, 221 KB, Original
2N3866
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N3866A.pdf5 Pages, 221 KB, Original
2N3866A
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N3866.pdf1 Pages, 28 KB, Original
2N3866
Advanced Semiconductor, Inc.
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
2N3866A.pdf1 Pages, 28 KB, Original
2N3866A
Advanced Semiconductor, Inc.
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
ASI2N3866.pdf1 Pages, 28 KB, Original
ASI2N3866
Advanced Semiconductor, Inc.
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3866.pdf4 Pages, 84 KB, Scan
2N3866
Thomson-csf
Signal Transistors and Field Effect Transistors 1976
2N3866.pdf1 Pages, 31 KB, Original
2N3866
Bharat Electronics Ltd
UHF / VHF RF Transistors
2N3866.pdf4 Pages, 592 KB, Original
2N3866
Central Semiconductor
Bipolar Transistors - BJT NPN VHF/UHF AM
2N3866A.pdf2 Pages, 522 KB, Original
2N3866A
Central Semiconductor Corp.
HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
2N3866LEADFREE.pdf2 Pages, 84 KB, Original
2N3866LEADFREE
Central Semiconductor Corp.
HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
2N3866 PBFREE.pdf7 Pages, 670 KB, Original
2N3866 PBFREE
Central Semiconductor
Trans RF BJT NPN 30V 0.4A 5000mW 3-Pin TO-39

Product Details Search Results:

Advancedsemiconductor.com/2N3866
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"500 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RO...
1338 Bytes - 22:25:35, 22 December 2024
Advancedsemiconductor.com/2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"800 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RO...
1344 Bytes - 22:25:35, 22 December 2024
Centralsemi.com/2N3866
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"400mA","Online Catalog":"NPN RF Transistors","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Family":"RF Transistors (BJT)","Product Photos":"TO-205AD TO-39-3 2N3019","Frequency - Transition":"500MHz","Series":"-","Standard Package":"500","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-39","Packaging":"Bulk","Datasheets":"2N3866(A)","Power - Max":"5W","RoHS Information":"RoHS Declaratio...
1741 Bytes - 22:25:35, 22 December 2024
Centralsemi.com/2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-3","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"800 MHz","Highest Frequency Band":"HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor...
1365 Bytes - 22:25:35, 22 December 2024
Centralsemi.com/2N3866LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"WIRE","Collector Current-Max (IC)":"0.4000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"30 V","Terminal Position":"BOTTOM","Transistor Application":"AMPLIFIER","Collector-base Capacitance-Max":"3 pF","Mfr Package Descrip...
1458 Bytes - 22:25:35, 22 December 2024
Centralsemi.com/2N3866 PBFREE
{"Collector Current (DC) ":"0.4(A)","Emitter-Base Voltage":"3.5(V)","Power Dissipation":"5(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"55(V)","DC Current Gain":"10","Configuration":"Single","Type":"NPN","Maximum Transition Frequency":"500(MIN)","Number of Elements":"1"}...
1380 Bytes - 22:25:35, 22 December 2024
Dla.mil/2N3866A+JAN
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JAN2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)":...
1053 Bytes - 22:25:35, 22 December 2024
Dla.mil/2N3866A+JANS
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANS2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)"...
1060 Bytes - 22:25:35, 22 December 2024
Dla.mil/2N3866A+JANTX
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTX2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)...
1066 Bytes - 22:25:35, 22 December 2024
Dla.mil/2N3866A+JANTXV
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTXV2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F...
1072 Bytes - 22:25:35, 22 December 2024
Dla.mil/2N3866+JAN
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JAN2N3866","@I(C) (A) (Test Condition)":"50m","C(obo) (Max) (F)":"3.0p"}...
1014 Bytes - 22:25:35, 22 December 2024
Dla.mil/2N3866+JANS
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANS2N3866","@I(C) (A) (Test Condition)":"50m","C(obo) (Max) (F)":"3.0p"}...
1020 Bytes - 22:25:35, 22 December 2024

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