Datasheet.Directory

{"P(D) Max.(W) Power Dissipation":"0.6","V(BR)CBO (V)":"60","h(FE) Min. Static Current Gain":"150","Type (NPN/PNP)":"PNP","I(C) Abs.(A) Collector Current":"50m","h(FE) Max. Current gain.":"450","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10u","Number of Devices":"2","Package":"TO-78","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"60","Military":"Y","Mil Number":"JANTX2N3810","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...

{"P(D) Max.(W) Power Dissipation":"0.6","V(BR)CBO (V)":"60","h(FE) Min. Static Current Gain":"150","Type (NPN/PNP)":"PNP","I(C) Abs.(A) Collector Current":"50m","h(FE) Max. Current gain.":"450","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10u","Number of Devices":"2","Package":"TO-78","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"60","Military":"Y","Mil Number":"JANTXV2N3810","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...

{"Collector Current (DC) ":"0.05 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.05 A","Collector-Emitter Voltage":"60 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","DC Current Gain (Min)":"100","Operating Temperature Classification":"Military","Power Dissipation":"0.35 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-78","Collector-Base Voltage":"60 V","Rad Hardened":"No","DC Current Gain":"100","Pin Count":"6","Number of Elements":"2"}...