Product Datasheet Search Results:

2N3553.pdf3 Pages, 286 KB, Scan
2N3553
Advani-oerlikon Ltd.
Television / Video Devices
2N3553.pdf1 Pages, 21 KB, Original
2N3553
Advanced Semiconductor, Inc.
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
2N3553.pdf1 Pages, 125 KB, Scan
2N3553
Thomson-csf
Shortform Semiconductor Catalogue 1982
2N3553.pdf4 Pages, 379 KB, Original
2N3553
Continental Device India Limited
Metal Can and Epoxy Transistors
2N3553.pdf1 Pages, 15 KB, Scan
2N3553
Ferranti Semiconductors
RF Diodes and Transistors 1977
2N3553.pdf6 Pages, 318 KB, Original
2N3553.pdf1 Pages, 66 KB, Scan
2N3553
Itt Semiconductors
Semiconductor Summary 1969
2N3553.pdf16 Pages, 443 KB, Scan
2N3553
Mullard
Quick Reference Guide 1977/78
2N3553.pdf1 Pages, 40 KB, Scan
2N3553
N/a
Shortform Data and Cross References (Misc Datasheets)

Product Details Search Results:

Advancedsemiconductor.com/2N3553
{"Status":"ACTIVE","Collector-base Capacitance-Max":"10 pF","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"40 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"500 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND"...
1333 Bytes - 17:34:37, 23 November 2024
Dla.mil/2N3553+JAN
{"Absolute Max. Power Diss. (W)":"7.0","V(BR)CBO (V)":"65","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"100k","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"30","Package":"TO-39","@V(CE) (V) (Test Condition)":"28","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JAN2N3553","@I(C) (A) (Test Condition)":"100m","Power Gain Min. (dB)":"10","Semiconductor Material":"S...
1075 Bytes - 17:34:37, 23 November 2024
Dla.mil/2N3553+JANTX
{"Absolute Max. Power Diss. (W)":"7.0","V(BR)CBO (V)":"65","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"100k","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"30","Package":"TO-39","@V(CE) (V) (Test Condition)":"28","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JANTX2N3553","@I(C) (A) (Test Condition)":"100m","Power Gain Min. (dB)":"10","Semiconductor Material":...
1087 Bytes - 17:34:37, 23 November 2024
Dla.mil/2N3553+JANTXV
{"Absolute Max. Power Diss. (W)":"7.0","V(BR)CBO (V)":"65","h(FE) Min. Static Current Gain":"10","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"100","@Freq. (Hz) (Test Condition)":"100k","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"30","Package":"TO-39","@V(CE) (V) (Test Condition)":"28","f(T) Min. (Hz) Transition Freq":"500M","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JANTXV2N3553","@I(C) (A) (Test Condition)":"100m","Power Gain Min. (dB)":"10","Semiconductor Material"...
1093 Bytes - 17:34:37, 23 November 2024
N_a/2N3553
{"Category":"NPN Transistor, Transistor","Amps":"1A","MHz":"175 MHz","Volts":"65V"}...
512 Bytes - 17:34:37, 23 November 2024
Semelab.co.uk/2N3553
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"65 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"500 MHz","Collector Current-Max (IC)":"0.3500 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Numbe...
1216 Bytes - 17:34:37, 23 November 2024
Semelab.co.uk/2N3553E1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"65 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"500 MHz","Collector Current-Max (IC)":"0.3500 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE...
1270 Bytes - 17:34:37, 23 November 2024

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