Did you mean: 2N3329
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Advancedsemiconductor.com/2N3329
{"Status":"ACTIVE","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Number of Terminals":"4","Transistor Application":"AMPLIFIER","Drain Current-Max (ID)":"0.0100 A","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"1000 ohm","Package Style":"CYLINDRICAL","DS Breakdown ...
1265 Bytes - 06:38:26, 13 January 2026
Microchip.com/TC52N3329ECT
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1494 Bytes - 06:38:26, 13 January 2026
Microchip.com/TC52N3329ECTTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1506 Bytes - 06:38:26, 13 January 2026
Solitrondevices.com/2N3329
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Drain-source On Resistance-Max":"1000 ohm","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"4","Number of Eleme...
1202 Bytes - 06:38:26, 13 January 2026
Various/2N3329
{"C(iss) Max. (F)":"20p","Absolute Max. Power Diss. (W)":"300m","g(fs) Max, (S) Trans. conduct,":"2.0m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"1.0k","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"10n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0m","Package":"TO-72","I(DSS) Min. (A)":"3.0m","Military":"N","V(GS)off Max. (V)":"5.0","I(G) Max. (A)":"10m","g(fs) Min. (S) Trans. conduct.":"1.0m"}...
868 Bytes - 06:38:26, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| CL02A224MQ2N3N.pdf | 6.12 | 1 | Request | |
| MSB6-1_2_H2N3M1-WP.pdf | 81.72 | 1 | Request | |
| MSB6-1_2_H2N3M1-WP-Z.pdf | 81.72 | 1 | Request | |
| MSB6N-1_2_H2N3M1-WP.pdf | 0.16 | 1 | Request | |
| MSB4-1_4_H2N3M1-WP-Z.pdf | 81.72 | 1 | Request | |
| MSB4N-1_4_H2N3M1-WP.pdf | 0.17 | 1 | Request | |
| MSB4-1_4_H2N3M1-WP.pdf | 81.72 | 1 | Request | |
| VV5QZ15-02N3TC.pdf | 8.56 | 1 | Request | |
| VV5QZ25-02N3TC.pdf | 8.56 | 1 | Request | |
| VV5Q11-12N3FU3-DR.pdf | 12.21 | 1 | Request | |
| VV5QC11-12N3FD0-DNS.pdf | 14.64 | 1 | Request | |
| VV5Q11-12N3FS0-NS.pdf | 12.21 | 1 | Request |
