Product Datasheet Search Results:
1 Pages, 170 KB, Scan- 2N2369AUB
- Microsemi Corp.
- 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
8 Pages, 437 KB, Original- 2N2369AUBC
- Microsemi Corp.
- 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2 Pages, 54 KB, Original- 2N2369AUBJAN
- New England Semiconductor
- NPN SILICON SWITCHING TRANSISTOR
2 Pages, 54 KB, Original- 2N2369AUBJANTX
- New England Semiconductor
- NPN SILICON SWITCHING TRANSISTOR
2 Pages, 54 KB, Original- 2N2369AUBJANTXV
- New England Semiconductor
- NPN SILICON SWITCHING TRANSISTOR
3 Pages, 55 KB, Original- JAN2N2369AUB
- Microsemi
- Bipolar Transistors - BJT NPN Transistor
2 Pages, 234 KB, Original- JANS2N2369AUB
- Microsemi Corp.
- 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
8 Pages, 437 KB, Original- JANS2N2369AUBC
- Microsemi Corp.
- 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Product Details Search Results:
Microsemi.com/2N2369AUB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Series":"-","Package / Case":"Surface Mount","Voltage - Collector Emitter Breakdown (Max)":"20V","Power - Max":"360mW","Packaging":"*","Datasheets":"2N2369A, 2N4449","Current - Collector Cutoff (Max)":"400nA","Supplier Device Package":"SMD","Standard Package":"1","Mounting Type":"Su...
1458 Bytes - 18:16:17, 11 March 2025
Microsemi.com/2N2369AUBC
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Turn-off Time-Max (toff)":"18 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Transistor Type":...
1273 Bytes - 18:16:17, 11 March 2025
Microsemi.com/JAN2N2369AUB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Series":"Military, MIL-PRF-19500/317","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"20V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N2369A, 2N4449","Current - Collector Cutoff (Max)":"400nA","Supplier Device Package":"UB","Standard Pac...
1482 Bytes - 18:16:17, 11 March 2025
Microsemi.com/JANS2N2369AUB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"-","Product Photos":"2N3637UB","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Current - Collector Cutoff (Max)":"400nA","Series":"Military, MIL-PRF-19500/317","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"UB","Packaging":"Bulk","Datasheets":"2N2369A, 2N4449","Power - Max":"360mW"...
1727 Bytes - 18:16:17, 11 March 2025
Microsemi.com/JANS2N2369AUBC
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configur...
1329 Bytes - 18:16:17, 11 March 2025
Microsemi.com/JANSF2N2369AUB
{"Transistor Polarity":"NPN","Operating Temperature Classification":"Military","Category ":"Bipolar Power","Emitter-Base Voltage":"4.5(V)","Rad Hardened":"Yes","Packaging":"Waffle","Power Dissipation":"0.36(W)","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"40(V)","DC Current Gain":"40","Mounting":"Surface Mount","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1507 Bytes - 18:16:17, 11 March 2025
Microsemi.com/JANSR2N2369AUB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Current - Collector Cutoff (Max)":"400nA","Series":"Military, MIL-PRF-19500/317","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"UB","Packaging":"Bulk","Datasheets":"2N2369AUB/UBC","Power - Max":"400mW","Package / Case":"3-SMD, N...
1590 Bytes - 18:16:17, 11 March 2025
Microsemi.com/JANTX2N2369AUB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Online Catalog":"NPN Transistors","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"JANTX2N2369AUB","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Series":"Military, MIL-PRF-19500/317","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"20V","Power - Max":"400mW","Packaging":"Bulk","Datasheets":"2N2369A, 2N4449","Current - Collect...
1780 Bytes - 18:16:17, 11 March 2025
Microsemi.com/JANTXV2N2369AUB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Online Catalog":"NPN Transistors","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"JANTX2N4xxx","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Series":"Military, MIL-PRF-19500/317","Package / Case":"TO-206AA, TO-18-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"20V","Power - Max":"400mW","Packaging":"Bulk","Datasheets":"2N2369A, 2N4449","Current...
1812 Bytes - 18:16:17, 11 March 2025
Semicoa.com/2N2369AUB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration...
1276 Bytes - 18:16:17, 11 March 2025
Semicoa.com/2N2369AUBJ
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
713 Bytes - 18:16:17, 11 March 2025
Semicoa.com/2N2369AUBJANS
744 Bytes - 18:16:17, 11 March 2025
