Product Datasheet Search Results:

2N2218ALJTXV.pdf2 Pages, 31 KB, Original
2N2218ALJTXV
New England Semiconductor
BJT, NPN, Dual Transistor, IC 0.8A

Product Details Search Results:

Semicoa.com/2N2218ALJ
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1303 Bytes - 15:28:55, 31 October 2024
Semicoa.com/2N2218ALJV
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1307 Bytes - 15:28:55, 31 October 2024
Semicoa.com/2N2218ALJX
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1309 Bytes - 15:28:55, 31 October 2024

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