Product Datasheet Search Results:
- 2N1711A
- Advanced Semiconductor, Inc.
- Silicon Transistor Selection Guide
- 2N1711A
- Central Semiconductor
- NPN Metal Can Switching and General Purpose Transistors
- 2N1711A
- Micro Electronics Corporation
- 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
- 2N1711A
- Raytheon Company
- Selection Guide 1977
- 2N1711A
- Semiconductors, Inc.
- Medium Power Transistors
- 2N1711A
- Semiconductor Technology, Inc.
- Small Signal Silicon Transistors
- 2N1711A
- Semitronics Corp.
- Metal Can Transistors - Silicon Small Signal Transistors
Product Details Search Results:
Microelectr.com.hk/2N1711A
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"100","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE S...
1286 Bytes - 11:48:00, 24 December 2024
Various/2N1711A
{"V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"1.0","V(BR)CBO (V)":"75","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"100","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"300","@V(CBO) (V) (Test Condition)":"60","I(CBO) Max. (A)":"2.0m","Package":"TO-5","f(T) Min. (Hz) Transition Freq":"70M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"15m","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test Condition)":"50m","C(obo) (Max) (F)":"25p"}...
958 Bytes - 11:48:00, 24 December 2024