Product Datasheet Search Results:
3 Pages, 339 KB, Original- 2N1671B
- Central Semiconductor Corp.
- UJT, TO-5
2 Pages, 281 KB, Original- 2N1671B
- Comset Semiconductors
- PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS
5 Pages, 621 KB, Scan- 2N1671B
- General Electric
- Semiconductor Data Handbook 1977
4 Pages, 256 KB, Original- 2N1671B
- Germanium Power Devices Corp.
- Silicon Unijunction Transistor
2 Pages, 140 KB, Original- 2N1671B
- Semiconductors, Inc.
- Unijunction Transistors
1 Pages, 61 KB, Scan- 2N1671B
- Solid State Inc.
- UNIJUNCTION TRANSISTOR
Product Details Search Results:
Baesystems.com/2N1671BP
{"Status":"Discontinued","Absolute Max. Power Diss. (W)":"450m","Package":"TO-5","I(P) Max. (A)":"12u","I(V) Min. (A)":"8.0m","r(BBO) Max. (ê)":"9.1k","Military":"N"}...
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Centralsemi.com/2N1671B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Peak Point Current-Max":"6 uA","Transistor Element Material":"SILICON","Valley Point Current-Min":"8 mA","Terminal Position":"BOTTOM","Transistor Type":"UNIJUNCTION","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...
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Solid_state_inc_/2N1671B
860 Bytes - 19:12:38, 31 December 2024
Various/2N1671B
{"I(E) Max. (A)":"50m","Intrinsic Standoff Ratio (Max)":"0.62","Absolute Max. Power Diss. (W)":"450m","Package":"TO-5","I(P) Max. (A)":"6.0u","I(V) Min. (A)":"8.0m","r(BBO) Min. (ê)":"4.7k","r(BBO) Max. (ê)":"9.1k","V(B2B1) Max. (V)":"35","Military":"N","Intrinsic Standoff Ratio (Min)":"0.47"}...
773 Bytes - 19:12:38, 31 December 2024
