Product Datasheet Search Results:
1 Pages, 48 KB, Scan- 2N1016D
- Api Electronics Group
- 7.5 A, 200 V, NPN, Si, POWER TRANSISTOR
1 Pages, 48 KB, Scan- JAN2N1016D
- Api Electronics Group
- 7.5 A, 200 V, NPN, Si, POWER TRANSISTOR
9 Pages, 273 KB, Scan- 2N1016D+JAN
- Defense Energy Support Center
- NPN Silicon High Power Transistors
1 Pages, 358 KB, Scan- 2N1016D
- Silicon Transistor Corp.
- JAN / Consumer / Military / Industrial / Automotive / Hi-Rel
1 Pages, 158 KB, Scan- JAN2N1016D
- N/a
- Shortform Transistor PDF Datasheet
1 Pages, 54 KB, Scan- 2N1016D
- Pirgo Electronics, Inc.
- Power Transistors in TO-82
1 Pages, 54 KB, Scan- JAN2N1016D
- Pirgo Electronics, Inc.
- Power Transistors in TO-82
Product Details Search Results:
Apitech.com/2N1016D
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-82, 2 PIN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"7.5 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE PO...
1241 Bytes - 15:28:29, 31 October 2024
Apitech.com/JAN2N1016D
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-82, 2 PIN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"7.5 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE PO...
1260 Bytes - 15:28:29, 31 October 2024
Dla.mil/2N1016D+JAN
{"@I(C) (A) (Test Condition)":"5.0","I(CBO) Max. (A)":"20m","Absolute Max. Power Diss. (W)":"150","I(C) Abs.(A) Collector Current":"7.5","t(f) Max. (s) Fall time.":"20u","@V(CE) (V) (Test Condition)":"4.0","f(T) Min. (Hz) Transition Freq":"20k","t(on) Max. (s) Turn-On Time":"6.0u","V(BR)CEO (V)":"200","@V(CBO) (V) (Test Condition)":"200","Military":"Y","h(FE) Min. Static Current Gain":"10","Package":"TO-82","Mil Number":"JAN2N1016D"}...
951 Bytes - 15:28:29, 31 October 2024
Microsemi.com/JAN2N1016D
{"Category":"Discrete Semiconductor Products","Series":"*","Other Names":"1086-16072","Family":"Transistors (BJT) - Single","Standard Package":"1"}...
894 Bytes - 15:28:29, 31 October 2024
Various/2N1016D
{"@I(C) (A) (Test Condition)":"5.0","I(CBO) Max. (A)":"20m","Absolute Max. Power Diss. (W)":"150","I(C) Abs.(A) Collector Current":"7.5","t(f) Max. (s) Fall time.":"20u","@V(CE) (V) (Test Condition)":"4.0","f(T) Min. (Hz) Transition Freq":"20k","t(on) Max. (s) Turn-On Time":"6.0u","V(BR)CEO (V)":"200","@V(CBO) (V) (Test Condition)":"200","Military":"N","h(FE) Min. Static Current Gain":"10","Package":"TO-82"}...
857 Bytes - 15:28:29, 31 October 2024
