Product Datasheet Search Results:

2MBI200S-120.pdf4 Pages, 502 KB, Original
2MBI200S-120-05.pdf4 Pages, 502 KB, Original
2MBI200S-120-50.pdf4 Pages, 216 KB, Original
2MBI200S-120-50
Fuji Electric
IGBT Array & Module Transistor, Dual Pack, N Channel, 200 A, 2.6 V, 1.5 kW, 1.2 kV, Module

Product Details Search Results:

Fujielectric.co.jp/2MBI200S-120
{"Status":"ACTIVE","Turn-on Time-Nom (ton)":"600 ns","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"7","Turn-off Time-Nom (toff)":"530 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"200 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuratio...
1344 Bytes - 16:57:59, 30 November 2024
Fujielectric.co.jp/2MBI200S-120-50
{"Transistor Polarity:":"N Channel","Collector Emitter Voltage V(br)ceo:":"1.2 kV","Collector Emitter Voltage Vces:":"2.6 V","No. of Pins:":"7","DC Collector Current:":"200 A","Power Dissipation Pd:":"1.5 kW","Transistor Case Style:":"Module","Operating Temperature Max:":"150 \u00b0C","SVHC:":"To Be Advised"}...
1245 Bytes - 16:57:59, 30 November 2024
Fuji_semiconductor/2MBI200S-120-50
896 Bytes - 16:57:59, 30 November 2024

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