Product Datasheet Search Results:

1SS385F.pdf3 Pages, 147 KB, Original
1SS385F
Toshiba
Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV.pdf3 Pages, 192 KB, Original
1SS385FV,L3F(T.pdf3 Pages, 233 KB, Original
1SS385FV,L3F(T
Toshiba
Silicon Epitaxial Schottky Barrier Type

Product Details Search Results:

Toshiba.co.jp/1SS385FV
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, ULTRA SMALL, 1-1Q1A, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","Average Forward Current-Max":"0.1000 A","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.1500 W","Number of Elements":"2","Case Connection":"CATHODE","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR"...
1350 Bytes - 14:47:10, 14 November 2024
Toshiba.co.jp/1SS385FV,L3F(T
{"Mounting":"Surface Mount","Packaging":"Tape and Reel","Rad Hardened":"No","Product Depth (mm)":"0.8(mm)","Package Type":"VESM","Pin Count":"3"}...
1235 Bytes - 14:47:10, 14 November 2024

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