Product Datasheet Search Results:
2 Pages, 40 KB, Original- 1N5822US
- Compensated Devices Incorporated
- 3 AMP SCHOTTKY BARRIER RECTIFIERS
2 Pages, 615 KB, Original- 1N5822USTX
- Compensated Devices Incorporated
- 3 Amp Schottky Barrier Rectifiers
2 Pages, 615 KB, Original- 1N5822USTXV
- Compensated Devices Incorporated
- 3 Amp Schottky Barrier Rectifiers
8 Pages, 1051 KB, Original- 1N5822US
- Microchip Technology
- Rectifier Diode Schottky 40V 3A 2-Pin E-MELF Bag
8 Pages, 1051 KB, Original- GRP-DATA-JANS1N5822US
- Microchip Technology
- Rectifier Diode Schottky 40V 3A 2-Pin E-MELF Waffle
Product Details Search Results:
Dla.mil/1N5822US+JANTX
{"Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":".7","Package Body Material":"Glass","Package":"DO-213var","I(O) Max.(A) Output Current":"3.0","@Temp. (°C) (Test Condition)":"100","@Temp (°C) (Test Condition)":"55","@V(R) (V)(Test Condition)":"40","V(RRM)(V) Rep.Pk.Rev. Voltage":"40","Military":"Y","I(RM) Max.(A) Reverse Current":"100u","@I(FM) (A) (Test Condition)":"9.4","Mil Number":"JANTX1N5822US","I(RM) Max.(A) Pk. Rev. Current":"10m"}...
1020 Bytes - 14:02:54, 27 December 2024
Dla.mil/1N5822US+JANTXV
{"Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":".7","Package Body Material":"Glass","Package":"DO-213var","I(O) Max.(A) Output Current":"3.0","@Temp. (°C) (Test Condition)":"100","@Temp (°C) (Test Condition)":"55","@V(R) (V)(Test Condition)":"40","V(RRM)(V) Rep.Pk.Rev. Voltage":"40","Military":"Y","I(RM) Max.(A) Reverse Current":"100u","@I(FM) (A) (Test Condition)":"9.4","Mil Number":"JANTXV1N5822US","I(RM) Max.(A) Pk. Rev. Current":"10m"}...
1026 Bytes - 14:02:54, 27 December 2024
Microchip.com/1N5822US
{"Peak Reverse Current":"100(uA)","Peak Non-Repetitive Surge Current":"80(A)","Peak Rep Rev Volt":"40(V)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Bag","Rectifier Type":"Schottky Diode","Operating Temp Range":"-65C to 125C","Peak Forward Voltage":"0.7(V)","Maximum Forward Current":"3000(mA)","Package Type":"E-MELF","Configuration":"Single","Pin Count":"2"}...
1431 Bytes - 14:02:54, 27 December 2024
Microchip.com/GRP-DATA-JANS1N5822US
{"Peak Rep Rev Volt":"40(V)","Peak Non-Repetitive Surge Current":"80(A)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Waffle","Rectifier Type":"Schottky Diode","Operating Temp Range":"-65C to 125C","Package Type":"E-MELF","Maximum Forward Current":"3000(mA)","Peak Forward Voltage":"0.7(V)","Peak Reverse Current":"100(uA)","Configuration":"Single","Pin Count":"2"}...
1493 Bytes - 14:02:54, 27 December 2024
Microchip.com/GRP-DATA-JANTXI21N5822US
928 Bytes - 14:02:54, 27 December 2024
Microchip.com/JANS1N5822US
863 Bytes - 14:02:54, 27 December 2024
Microchip.com/JANTX1N5822US
1075 Bytes - 14:02:54, 27 December 2024
Microchip.com/JANTX1N5822US/TR
750 Bytes - 14:02:54, 27 December 2024
Microchip.com/JANTXV1N5822US
{"Peak Reverse Current":"100(uA)","Peak Non-Repetitive Surge Current":"80(A)","Peak Rep Rev Volt":"40(V)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Bag","Rectifier Type":"Schottky Diode","Operating Temp Range":"-65C to 125C","Package Type":"E-MELF","Maximum Forward Current":"3000(mA)","Peak Forward Voltage":"0.7(V)","Configuration":"Single","Pin Count":"2"}...
1463 Bytes - 14:02:54, 27 December 2024
Microsemi.com/1N5822US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Online Catalog":"Schottky Rectifier","Current - Reverse Leakage @ Vr":"100mA @ 40V","Mounting Type":"Surface Mount","Product Photos":"1N6643US","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"-","Voltage - Forward (Vf) (Max) @ If":"500mV @ 3A","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"-","Datasheets":"1N5820US-1N5822,1N6864US","Family":"Diodes, Rectifiers - Single","Operating Temperature - Junction":"-65...
1773 Bytes - 14:02:54, 27 December 2024
Microsemi.com/1N5822USJANS
{"Peak Rep Rev Volt":"40(V)","Avg. Forward Curr (Max)":"3","Peak Non-Repetitive Surge Current":"80(A)","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Forward Current":"3000(mA)","Peak Reverse Current":"100(uA)","Forward Voltage":"0.7(V)","Packaging":"Waffle","Rectifier Type":"Schottky Diode","Operating Temp Range":"-65C to 125C","Package Type":"E-MELF","Rad Hardened":"No","Peak Non-Repetitive Surge Current (Max)":"150","Rev Curr":"100(uA)","Peak Forward Voltage":"0.7(V)","Maxi...
1624 Bytes - 14:02:54, 27 December 2024
Microsemi.com/1N5822USJANTX
{"Peak Rep Rev Volt":"40","Avg. Forward Curr (Max)":"3","Peak Non-Repetitive Surge Current":"150 A","Rectifier Type":"Schottky Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"0.7","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 125C","Package Type":"E-MELF","Peak Non-Repetitive Surge Current (Max)":"150","Rev Curr":"100","Configuration":"Single","Pin Count":"2"}...
1412 Bytes - 14:02:54, 27 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1N5822.pdf | 0.12 | 1 | Request |
