Product Datasheet Search Results:

1N5811US+JAN.pdf16 Pages, 429 KB, Scan
1N5811US+JAN
Defense Electronics Supply Center
6A Iout, 150V Vrrm Fast Recovery Rectifier
1N5811US+JANS.pdf16 Pages, 429 KB, Scan
1N5811US+JANS
Defense Electronics Supply Center
6A Iout, 150V Vrrm Fast Recovery Rectifier
1N5811US+JANTX.pdf16 Pages, 429 KB, Scan
1N5811US+JANTX
Defense Electronics Supply Center
6A Iout, 150V Vrrm Fast Recovery Rectifier
1N5811US+JANTXV.pdf16 Pages, 429 KB, Scan
1N5811US+JANTXV
Defense Electronics Supply Center
6A Iout, 150V Vrrm Fast Recovery Rectifier
1N5811US+JANTX.pdf7 Pages, 127 KB, Original
1N5811US+JANTX
Microsemi
Diode Switching 150V 6A 2-Pin E-MELF

Product Details Search Results:

Dla.mil/1N5811US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@T...
1152 Bytes - 10:44:00, 15 November 2024
Dla.mil/1N5811US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@...
1159 Bytes - 10:44:00, 15 November 2024
Dla.mil/1N5811US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","...
1165 Bytes - 10:44:00, 15 November 2024
Dla.mil/1N5811US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n",...
1170 Bytes - 10:44:00, 15 November 2024
Microsemi.com/1N5811US+JANTX
{"Peak Rep Rev Volt":"150","Avg. Forward Curr (Max)":"6","Peak Non-Repetitive Surge Current":"125 A","Rectifier Type":"Switching Diode","Mounting":"Surface Mount","Rad Hardened":"Yes","Forward Voltage":"0.875","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30","Package Type":"E-MELF","Peak Non-Repetitive Surge Current (Max)":"125","Rev Curr":"5","Configuration":"Single","Pin Count":"2"}...
1460 Bytes - 10:44:00, 15 November 2024

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