Product Datasheet Search Results:
1 Pages, 34 KB, Original- 1N5706B
- Aeroflex / Metelics
- 47 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 45 KB, Scan- 1N5706BCO
- Aeroflex / Metelics
- 47 pF, 65 V, SILICON, VARIABLE CAPACITANCE DIODE
1 Pages, 62 KB, Scan- 1N5706B
- Api Electronics Group
- VHF-UHF BAND, 47 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
2 Pages, 151 KB, Original- 1N5706B
- Codi Semiconductor, Inc.
- Voltage-Variable Capacitance (Tuning) Diodes
1 Pages, 53 KB, Scan- 1N5706B
- Knox Semiconductor, Inc.
- 60V Vrrm, 47pF Capacitance Varactor Diode
1 Pages, 49 KB, Original- 1N5706B
- Msi Electronics, Inc.
- UHF/VHF ABRUPT TUNING DIODES
2 Pages, 84 KB, Scan- 1N5706B
- International Semiconductor, Inc.
- 60V Vrrm, 47pF Capacitance Varactor Diode
Product Details Search Results:
Aeroflex.com/1N5706B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"47 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":...
1351 Bytes - 04:44:12, 17 November 2024
Aeroflex.com/1N5706BCO
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"65 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"3.2","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"47 pF","Diode Cap Tolerance":"5 %","Quality Factor-Min":"300","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Packa...
1250 Bytes - 04:44:12, 17 November 2024
Apitech.com/1N5706B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"65 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"3.2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"47 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"3...
1391 Bytes - 04:44:12, 17 November 2024
Various/1N5706B
{"C1/C2 Min. Capacitance Ratio":"3.2","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"300","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"47p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 04:44:12, 17 November 2024
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